TK4P60DB 2013-11-01 1 toshiba field effect transistor silicon n channel mos type ( -mos ) TK4P60DB switching regulator applications ? low drain-source on-resistance: r ds (on) = 1.6 (typ.) ? high forward transfer admittance: ? y fs ? = 2.2 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 600 v) ? enhancement-mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v dc (note 1) i d 3.7 drain current pulse (t = 1 ms) (note 1) i dp 14.8 a drain power dissipation (tc = 25c) p d 80 w single pulse avalanche energy (note 2) e as 147 mj avalanche current i ar 3.7 a repetitive avalanche energy (note 3) e ar 8 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precaut ions?/?derating concept and methods?) and individual reliability data (i.e. reliabilit y test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 1.56 c/w thermal resistance, channel to ambient r th (ch-a) 125 c/w note 1: please use devices on conditions that the channel temperature is below 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 18.7 mh, r g = 25 , i ar = 3.7 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm + 0.25 ? 0.12 1.52 6.1 0.12 5.34 0.13 2.29 1 3 + 0.4 ? 0.6 10.0 6.6 0.2 2 0.76 0.12 1.14max 1.01max 2.3 0.1 0.58max 0.07 0.07 1.08 0.2 1. gate 2. drain heat sink 3. source jedec ? jeita ? toshiba 2-7k1a weight : 0.36 g (typ.) 1 3 2 start of commercial production 2009-12
TK4P60DB 2013-11-01 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 600 v, v gs = 0 v ? ? 10 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.4 ? 4.4 v drain-source on-resistance r ds (on) v gs = 10 v, i d = 1.9 a ? 1.6 2.0 forward transfer admittance ? y fs ? v ds = 10 v, i d = 1.9 a 0.6 2.2 ? s input capacitance c iss ? 540 ? reverse transfer capacitance c rss ? 3 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 60 ? pf rise time t r ? 18 ? turn-on time t on ? 40 ? fall time t f ? 8 ? switching time turn-off time t off ? 55 ? ns total gate charge q g ? 11 ? gate-source charge q gs ? 6 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 3.7 a ? 5 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 3.7 a pulse drain reverse current (note 1) i drp ? ? ? 14.8 a forward voltage (diode) v dsf i dr = 3.7 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 1000 ? ns reverse recovery charge q rr i dr = 3.7 a, v gs = 0 v, di dr /dt = 100 a/ s ? 5.5 ? c marking (note 4) note 4: TK4P60DB lot no. part no. (or abbreviation code) * weekly code: (four digits) week of manufacture (01 for first week of year, continuing up to 52 or 53) year of manufacture (the last 2digits of the calendar year) 0 v 10 v v gs v dd 200 v i d = 1.9.a v out 50 duty 1%, t w = 10 s r l = 105
TK4P60DB 2013-11-01 3 0.1 0.1 1 10 1 100 10 0.1 10 0.1 1 25 100 tc = ? 55 c 10 1 0 8 12 16 20 0 i d = 3.7 a 4 8 12 16 20 1 1.9 4 10 0 0 2 4 6 8 1.6 8 tc = ? 55 c 25 100 3.2 4.8 6.4 8 6.4 4.8 3.2 0 0 20 40 50 v gs = 5.5v 7.5 10 8 30 10 7 6.5 6 1.6 5 4 2 1 0 0 2 4 6 8 10 v gs = 5 v 5.5 6 6.5 7 8 10 3 common source tc = 25c pulse test i d ? v ds i d ? v ds i d ? v gs v ds ? v gs common source tc = 25c pulse test |y fs | ? i d r ds (on) ? i d drain-source voltage v ds (v) drain current i d (a) drain-source voltage v ds (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) drain-source on-resistance r ds (on) ( ) drain-source voltage v ds (v) forward transfer admittance |y fs | (s) common source tc = 25c pulse test common source v gs = 10 v tc = 25c pulse test common source v ds = 20 v pulse test common source v ds = 20 v pulse test
TK4P60DB 2013-11-01 4 0 4 8 v dd = 100 v v ds v gs 400 200 12 16 500 400 300 200 100 0 20 16 12 8 4 0 20 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 0 0.1 ? 0.3 1 100 ? 0.6 ? 0.9 v gs = 0 v 10 3 1 5 ? 1.2 ? 1.5 10 160 ? 40 0 40 80 120 ? 80 5 3 2 1 0 i d = 1 a 1.9 3.7 4 v th ? tc r ds (on) ? tc i dr ? v ds 100 0 0 40 80 120 160 40 60 80 20 p d ? tc common source tc = 25c pulse test common source v gs = 0 v f =1mhz tc = 25c common source v ds = 10 v i d = 1ma pulse test case temperature tc (c) gate threshold voltage v th (v) case temperature tc (c) total gate charge q g (nc) capacitance c (pf) c ? v ds drain-source voltage v ds (v) drain-source on-resistance r ds (on) ( ) case temperature tc (c) drain reverse current i dr (a) drain-source voltage v ds (v) drain power dissipation p d (w) drain-source voltage v ds (v) dynamic input / output characteristics gate-source voltage v gs (v) common source i d = 3.7 a tc = 25c pulse test common source v gs = 10 v pulse test
TK4P60DB 2013-11-01 5 0.001 0.01 1 10 100 10 1000 100 100 s * 1 ms * 0.1 1 10 0.1 1 10 100 1m 10m 100m 1 10 t p dm t duty = t/t r th (ch-c) = 1.56 c/w duty=0.5 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 18.7 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w e as ? t ch normalized transient thermal impedance r th (t) /r th (ch-c) pulse width t w (s) safe operating area drain current i d (a) drain-source voltage v ds (v) * single pulse tc=25 curves must be derated linearly with increase in temperature. i d max (pulsed) * i d max ( continuous ) avalanche energy e as (mj) channel temperatur e (initial) t ch (c) test circuit waveform dc operation tc = 25c 200 160 120 80 40 0 25 50 75 100 125 150 v dss max
TK4P60DB 2013-11-01 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively "toshiba"), reserve the right to make changes to the in formation in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba's written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situat ions in which a malfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, cu stomers must also refer to and comply with (a) the latest ve rsions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and applicat ion notes for product and the precautions and condi tions set forth in the "toshiba se miconductor reliability handbook" and (b) the instructions for the application with which the product will be us ed with or for. customers are solely responsible for all aspe cts of their own product design or applications , including but not limited to (a) determining t he appropriateness of the use of this product in such design or applications; (b) eval uating and determining the applicability of any info rmation contained in this document, or in c harts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operatin g parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. ? 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